pa ge:p2-p1 plastic-encapsulate transistors features ? large collector power dissipation pc ? complementary to 2sd874a maximum ratings ( ta=25 unless otherwise noted) parameter symbol value unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current -continuous i c -1 a collector power dissipation p c 0.5 w junction temperature t j 150 storage temperature t stg -55to +150 electrical characteristics ( @ ta=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo ic=- 10a,i e =0 -60 v collector-emitter breakdown voltage v ceo ic=-2ma,i b =0 -50 v emitter-base breakdown voltage v ebo i e =-1 0a,i c =0 -5 v collector cut-off current i cbo v cb =-20v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a dc current gain h fe(1) v ce =-10v,i c =-500ma 85 340 h fe(2) v ce =-5v,i c =-1a 50 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -0.2 -0.4 v base-emitter saturation voltage v be(sat) i c =-500ma,i b =-50ma -0.85 -1.2 v transition frequency f t v ce =-10v,i c =-50ma,f=200mhz 200 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 20 30 pf classification of h fe rank q r s range 85-170 120-240 170-340 marking bq br bs 2SB766A (pnp) 1. base 2. collecto sot-89 3. emitter mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
pa ge:p2-p2 plastic-encapsulate transistors 2SB766A typical characteristics mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/
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